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  unisonic technologies co., ltd HE8550 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r206-031,b  low voltage high current small signal pnp transistor description the utc HE8550 is a low voltage high current small signal pnp transistor, designed for class b push-pull 2w audio amplifier for portable radio and general purpose applications. features * collector current up to 1.5a * collector-emitter voltage up to 25 v * complimentary to utc he8050 to-92 1 1 sot-89 to-92nl 1 sot-23 1 2 3 *pb-free plating product number: HE8550l ordering information order number pin assignment normal lead free plating package 1 2 3 packing HE8550-x-ab3-r HE8550l-x-ab3-r sot-89 b c e tape reel HE8550-x-ae3-r HE8550l-x-ae3-r sot-23 e b c tape reel HE8550-x-t92-b HE8550l-x-t92-b to-92 e c b tape box HE8550-x-t92-k HE8550l-x-t92-k to-92 e c b bulk HE8550-x-t9n-b HE8550l-x-t9n-b to-92nl e c b tape box HE8550-x-t9n-k HE8550l-x-t9n-k to-92nl e c b bulk HE8550-x-t9n-r HE8550l-x-t9n-r to-92nl e c b tape reel HE8550l-x-ae3-r (1)packing type (2)package type (3)rank (4)lead plating (1) b: tape box, k: bulk, r: tape reel (2) ab3: sot-89, ae3: sot-23, t92: to-92, t 9n: to-92nl (3) x: refer to classification of h fe2 (4) l: lead free plating, blank: pb/sn  marking(for sot-23 package) ba 
HE8550 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-031,b absolute maximum rating (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -6 v sot-23 350 mw sot-89 0.5 w collector dissipation (ta=25 ) 
to-92/to-92nl p c 1 w collector current i c -1.5 a junction temperature t j +150 
operating ambient temperature t opr -40 ~ +150 
storage temperature t stg -65 ~ +150 
note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -40 v collector-emitter breakdown voltage bv ceo i c =-2ma, i b =0 -25 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -6 v collector cut-off current i cbo v cb =-35v, i e =0 -100 na emitter cut-off current i ebo v eb =-6v, i c =0 -100 na h fe1 v ce =-1v, i c =-5ma 45 170 h fe2 v ce =-1v, i c =-100ma 85 160 500 dc current gain h fe3 v ce =-1v, i c =-800ma 40 80 collector-emitter saturation voltage v ce(sat) i c =-800ma, i b =-80ma -0.28 -0.5 v base-emitter saturation voltage v be(sat )i c =-800ma, i b =-80ma -0.98 -1.2 v base-emitter voltage v be v ce =-1v,i c =-10ma -0.66 -1.0 v current gain bandwidth product f t v ce =-10v,i c =-50ma 100 190 mhz output capacitance c ob v cb =-10v, i e =0 f=1mhz 9.0 pf classification of h fe2 rank c d e range 120-200 160-300 250-500 
HE8550 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-031,b typical characteristics static characteristics collector-emitter voltage ( v) collector current, i c (ma) -0 -0.4 -0.8 -1.2 -1.6 -2.0 0 -0.1 -0.2 -0.3 -0.4 -0.5 i b =-0.5ma i b =-1.0ma i b =-1.5ma i b =-2.0ma i b =-2.5ma i b =-3.0ma dc current gain collector current, i c (ma) dc current gain, h fe v ce =-1v -10 -1 -10 0 -10 1 -10 2 -10 3 10 0 10 1 10 2 10 3    base-emitter on voltage collector current, i c (ma) base-emitter voltage (v) 0 -0.2 -0.4 -0.6 -0.8 -1.0 v ce =-1v collector current , i c (ma) saturation voltage (mv) saturation voltage v ce(sat) v be (sat) i c =10*i b -10 0 -10 1 -10 2 -10 3 -10 -1 -10 0 -10 1 -10 2 -10 3 -10 1 -10 2 -10 3 -10 4    current gain-bandwidth product collector output capacitance collector current, i c (ma) current gain-bandwidth product, f t (mhz) v ce =-10v collector-base voltage (v) capacitance, c ob (pf) f=1mhz i e =0 -10 0 -10 1 -10 2 -10 3 10 0 10 1 10 2 10 3 -10 0 -10 1 -10 2 -10 3 10 0 10 1 10 2 10 3   
HE8550 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-031,b                                                 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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